| PART |
Description |
Maker |
| SFF1605GD |
16.0 Amperes Insulated Doubler Polarity Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| SFF2001G SFF2002G SFF2003G |
20.0 Amperes Insulated Dual Common Cathode Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| SFF2001GD SFF2002GD SFF2003GD |
20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| PM200CSE060 |
FLAT-BASE TYPE INSULATED INSULATED PACKAGE 平性基地型绝缘绝缘包装
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| PM50B4LA06007 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM200CSE06005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM75RVA060 PM75RVA06005 PM75RVA06011 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RSD060 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
